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Si8410/20/21 (5 kV)
Si8422/23 (2.5 & 5 kV)
Table 7. Insulation and Safety-Related Specifications
Value
Parameter
Symbol
Test Condition
WB
NB
Unit
SOIC-16
SOIC-8
Nominal Air Gap (Clearance) 1
Nominal External Tracking (Creepage) 1
Minimum Internal Gap (Internal Clearance)
L(IO1)
L(IO2)
8.0 min
8.0 min
0.014
4.9 min
4.01 min
0.008
mm
mm
mm
Tracking Resistance
(Proof Tracking Index)
Erosion Depth
PTI
ED
IEC60112
600
0.019
600
0.040
V RMS
mm
Resistance (Input-Output)
2
R IO
10 1,2
10 1,2
?
Capacitance (Input-Output) 2
C IO
f = 1 MHz
2.0
1.0
pF
Input Capacitance
3
C I
4.0
4.0
pF
Notes:
1. The values in this table correspond to the nominal creepage and clearance values as detailed in “7. Package Outline:
16-Pin Wide Body SOIC”, “9. Package Outline: 8-Pin Narrow Body SOIC”. VDE certifies the clearance and creepage
limits as 8.5 mm minimum for the WB SOIC-16 package and 4.7 mm minimum for the NB SOIC-8 package. UL does
not impose a clearance and creepage minimum for component level certifications. CSA certifies the clearance and
creepage limits as 3.9 mm minimum for the NB SOIC-8 and 7.6 mm minimum for the WB SOIC-16 package.
2. To determine resistance and capacitance, the Si84xx is converted into a 2-terminal device. Pins 1–8 (1–4, NB SOIC-8)
are shorted together to form the first terminal and pins 9–16 (5–8, NB SOIC-8) are shorted together to form the second
terminal. The parameters are then measured between these two terminals.
3. Measured from input pin to ground.
Table 8. IEC 60664-1 (VDE 0844 Part 5) Ratings
Parameter
Test Conditions
Specification
NB SOIC8 WB SOIC 16
Basic Isolation Group
Installation Classification
Material Group
Rated Mains Voltages < 150 V RMS
Rated Mains Voltages < 300 V RMS
Rated Mains Voltages < 400 V RMS
Rated Mains Voltages < 600 V RMS
Rev. 1.3
I
I-IV
I-III
I-II
I-II
I
I-IV
I-IV
I-III
I-III
17
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